jiangsu changjiang electronics technology co., l t d sot-89-3l plastic-encapsulate mosfets CJA03N10 n-channel mosfet description the CJA03N10 uses advanced trench technol ogy and design to provide excellent r ds(on) with low gate charge .this device is suitable for use in a wide variety of applications. fea tures z lead free product is acquired z special process technology for high esd capability z high density cell design for ultra low r ds(on) z good stability and uniformity with high e as z excellent package for good heat dissipa tion application z power switching application z hard switching and high frequency circuits z uninterruptible power supply maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-s ourc e voltag e v ds 100 v gate-source voltage v gs 20 v continuous drain cu rrent i d 3 a pulsed drain cu rrent (n ote 1) i dm 20 a power dissi p ation p d 0.5 w t hermal resist ance from jun c tion to ambie n t (note 2) r ja 250 /w junctio n t e mperature t j 150 storage temperature t stg -55~+150 so t -89- 3l 1. gate 2. drain 3. source www.cj-elec.com 1 d , apr ,2015 marking equivalent circuit v (br) dss r ds(on) max i d 100 v ? 140 m @ 10v ? 3 a
paramete r symbol test condition min typ max unit sta t ic characteristics drain-sourc e breakdown voltage v (br)dss v gs = 0v, i d =250a 100 v ze ro gate volt age drain current i dss v ds =100v,v gs = 0v 1 a gate-body leak age current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =250a 1 2 v drain-sourc e on-resistance (note 3) r ds(on ) v gs =10v, i d =5a 140 m ? for ward transconductance (note 3) g fs v ds =5v, i d =2.9a 3 s diode for ward voltage (note 3) v sd i s =3a, v gs = 0v 1.2 v dynam ic characteristics (note 4) input capacitan ce c iss 690 pf output capacitance c oss 120 pf reverse transfer capacitanc e c rss v ds =25v,v gs =0v,f =1 mhz 90 pf switching ch a racteristics (note 4) tu rn-on dela y time t d( on) 11 ns turn-on rise time t r 7.4 ns tu rn-off delay time t d( o f f) 35 ns turn-off fall time t f v gs =10v,v ds =30v, r gen =2.5 ? , i d =2a, r l =15 ? 9.1 ns to tal gate char ge q g 15.5 nc gate-source charge q gs 3.2 nc gate-drain charge q gd v ds =30v,v gs =10v,i d =3a 4.7 nc notes : 1. repetitive ra ting : pulse width limited by junction temperature. 2. surface mounted on fr4 board , t 10s. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to producting. mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 d,apr,2015
012345 0 5 10 15 20 0 3 6 9 1 21 51 8 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 400 500 600 700 800 900 1000 1100 1200 1e-4 1e-3 0.01 0.1 1 10 25 50 75 100 125 1.4 1.5 1.6 1.7 1.8 1.9 0.5 1 .0 1.5 2.0 2.5 3.0 3.5 4.0 50 100 150 200 250 300 v gs =10v v gs =4v 3.5v 3v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =2.5v gate to source voltage v gs (v) on - resistance r ds( o n) (m ? ) i d =5a ta=25 pulsed v gs ?? r ds(on) drain current i d (a) gate to source voltage v gs (v) v ds =10v pulsed t a =100 t a =25 tr an sfer characteristics source current i s (a) source to drain voltage v sd (m v) ta=25 pulsed v sd i s ?? ou t put characteristics thresho ld vo ltage v th (v) junction tem perature t j ( ) i d =250ua thr e shold voltage vgs=2.5v on - resistance r ds( o n) (m ? ) drain current i d (a) ta=25 pulsed vgs=10v i d ?? r ds(on) typical characteristics www.cj-elec.com 3 d,apr,2015
min m a x min m a x a 1. 400 1. 600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. sot-89-3l package outline dimensions sot-89-3l suggested pad layout www.cj-elec.com 4 d,apr,2015
sot-89-3l tape and reel www.cj-elec.com 5 d,apr,2015
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